This standard establishes methods for calculating failure rates in units of FITs by using data in varying degrees of detail such that results can be obtained from almost any data set. The objective is to provide a reference to the way failure rates are calculated.

Committee(s): JC-14.3

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This document describes design of test structures needed to assess the reliability of aluminum-copper, refractory metal barrier interconnect systems. This includes any metal interconnect system where a refractory metal barrier or other barrier material prevents the flow of aluminum and/or copper metal ions from moving between interconnect layers. This document is not intended to show design of test structures to assess aluminum or aluminum-copper alloy systems, without barriers to Al and Cu ion movement, nor for Cu only metal systems. Some total interconnect systems might not include barrier materials on all metal layers. The structures in this standard are designed for cases where a barrier material separates two Al or Al alloy metal layers. The purpose of this document is to describe the design of test structures needed to assess electromigration (EM) and stress-induced-void (SIV) reliability of AlCu barrier metal systems.

Committee(s): JC-14.2, JC-14.21

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This test is used to determine the Soft Error Rate (SER) of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) for errors which require no more than re-reading or re-writing to correct and as used in terrestrial environments. It simulates the operating condition of the device and is used for qualification, characterization, or reliability monitoring. This test is intended for execution in ambient conditions without the artificial introduction of radiation sources.

Committee(s): JC-14.1, JC-14

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This test is used to determine the terrestrial cosmic ray Soft Error Rate (SER) sensitivity of solid state volatile memory arrays and bistable logic elements (e.g. flip-flops) by measuring the error rate while the device is irradiated in a neutron or proton beam of known flux. The results of thi
accelerated test can be used to estimate the terrestrial cosmic ray induced SER for a given terrestrial cosmic ray radiation environment. This test cannot be used to project alpha-particleinduced SER.

Committee(s): JC-14.1, JC-14

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This standard (a replacement of JEDEC Standards No. 8, 8-1, 8-1-A, and 8-A) defines dc interface parameters for a family of digital circuits operating from a power supply of nominal 3.0 V/3.3. V and driving/driven by parts of the same family. The specifications in this standard represent a minimum set of 'base line' set of interface specifications for LVTTL-compatible and LVCMOS-compatible circuits.

Committee(s): JC-16

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This document describes an accelerated stress and test methodology for measuring device paramete
changes of a single p-channel MOSFET after Negative Bias Temperature Instability (NBTI) stress at dc bias conditions. This document gives a procedure to investigate NBTI stress in a symmetric voltage condition with the channel inverted (VGS < 0) and no channel conduction (VDS = 0).There can be NBTI degradation during channel conduction (VGS < 0, VDS < 0), however, this document does not cover this phenomena.

Committee(s): JC-14.2, JC-14

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This document defines a constant voltage stress test procedure for characterizing time-dependent dielectric breakdown or 'wear-out' of thin gate dielectrics used in integrated circuit technologies. The test is designed to obtain voltage and temperature acceleration parameters required to estimate oxide life at use conditions. The test procedure includes sophisticated techniques to detect breakdown in ultra-thin films that typically exhibit large tunneling currents and soft or noisy breakdown characteristics. This document includes an annex that discusses test structure design, methods to determine the oxide electric field in ultra-thin films, statistical models, extrapolation models, and example failure-rate calculations

Committee(s): JC-14.2, JC-14

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The method described in this document applies to all application specific reliability testing for solid state components with known failure mechanisms where the test duration and conditions vary based on application variables. This document does not cover reliability tests that are characterization based or essentially go / no-go type tests, for example, ESD, latch-up, or electrical over stress. Also, it does not attempt to cover every failure mechanism or test environment, but does provide a methodology that can be extended to other failure mechanisms and test environments.

Committee(s): JC-14.3, JC-14

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The normative information in this standard is intended to provide a technical design team to construct the interface on a FED and a BED such that they will operate correctly with each other (at the interface level), when designed to this specification. Additional informative information is provided in the appendices to help illustrate the normative material. This document addresses the following interface topics: 1) RF-BB Electrical layer: time and amplitude specifications for lines, drivers, receivers, clocks; 2)RF-BB Link layer: bits, clock-data synchronization, power modes; 3) RF-BB Transport layer: data types, data framing, data bandwidth, connection to core IC; 4) RF-BB Interface Registers

This document defines a high-speed serial link that enables the bi-directional transfer of data and control information between the FED and BED. The document does not mandate the use of specific signaling, standard framing or standard messaging needed to make this an interoperable interface standard for RF devices or BB devices.

Committee(s): JC-61

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