Dictionary: JESD88

JEDEC publishes a Dictionary of Terms for Solid State Technology, JESD88. Its purpose is to promote the uniform use of terms, definitions, abbreviations, and symbols throughout the solid state industry. The terms and definitions from JESD88 are provided here for quick search. This area will be updated as new terms and definitions are developed by JEDEC Committees and approved by the JEDEC Board of Directors.

battery voltage detect [BD(n)]

The signals BD1 and BD2 generated by the memory card as an indication of the condition of the battery on the memory card. Both signals are kept asserted when the battery is in good condition. When BD2 is negated while BD1 is still asserted, the battery is in a warning condition and should be replaced, although data integrity on the card is still assured. If BD1 is negated with BD2 either asserted or negated, the battery is no longer serviceable and data is lost.

References:

JESD21-C, 1/97

baud

A unit of signaling speed equal to the number of discrete conditions or signal events per second. (Ref. ANSI X3.172.)

NOTE For example, one baud equals one bit per second in a train of binary signals or one 3‑bit value per second in a train of signals each of which can assume one of eight (2³) different states.

References:

JESD100B.01, 12/02

BBD

See "bucket-brigade device".

References:

BCCD

See "buried-channel charge-coupled device".

References:

BCD

See "bipolar-and-CMOS-and-DMOS technology".

References:

BCXXX series

A BiCMOS series that includes devices whose input logic levels are TTL-compatible and whose outputs are specified at TTL levels; the low-level output voltage is specified at 24 mA and 48 mA.

References:

JESD54#, 2/96

BD(n)

See "battery voltage detect".

References:

BDRAM

See "burst DRAM".

References:

beam fluence

The fluence of a beam (see "fluence").

References:

JESD89-3#, 9/05

beam flux density

The flux densiy of a beam (see "flux density").

References:

JESD89-3#, 9/05

beam lead

A thick-film lead formed on and attached to the chip interconnection pattern and projecting cantilevered beyond the chip periphery for attachment to a substrate.

References:

JESD99B, 5/07

behavioral description

The algorithms or equations defining a function.

References:

JESD12-1B, 8/93
JESD99B, 5/07

benchmark

A standard by which something can be judged.

References:

EIA-599-A, 6/98

See "byte-mode enable".

References:

BGA

See "ball-grid-array" and also "grid-array package".

References:

bias

(1) A voltage or current applied to an electronic device to establish a reference level for operation.

(2) The difference between the mean (or expectation) of an estimator, T, and the true value, θ, of a parameter: E(T) - θ.

References:

Merriam-Webster's Collegiate Dict.

JESD37, 10/92

bias charge; circulating bias charge (for analog signal applications)

A charge that defines the no-signal level.

NOTE This charge is inserted into all potential wells electrically or by radiation.

References:

JESD99B, 5/07

BiCMOS

See "bipolar-and-CMOS technology".

References:

BiCMOS series

A series that includes devices combining bipolar and silicon-gate complementary metal-oxide-semiconductor (CMOS) field-effect devices in a single-chip integrated circuit.

References:

JESD54, 2/96

bidirectional ABD

A two-terminal ABD with a voltage-current avalanche breakdown characteristic in both directions, which can be either symmetrical or asymmetrical.

NOTE Large transient currents will be clamped for voltage of either polarity across two similar p-n junctions in series connected in opposite directions. During a transient current event in this operating mode, one of the two p-n junctions is always in avalanche breakdown and the other is in the forward-conducting, low-voltage mode. The voltage across the bidirectional ABD is the sum of these two voltages. The avalanche breakdown voltage is substantially the same in both directions for a symmetrical bidirectional ABD; however, it may also be intentionally different or asymmetrical by design for special applications. Since multiple p-n junction capacitances in series reduce the overall total capacitance, the bidirectional ABD has lower capacitance than its unidirectional counterpart.

Bidirectional ABD symbol options

References:

JESD77C, 10/09
JESD210, 12/07

Dictionary: JESD88

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