Dictionary: JESD88

JEDEC publishes a Dictionary of Terms for Solid State Technology, JESD88. Its purpose is to promote the uniform use of terms, definitions, abbreviations, and symbols throughout the solid state industry. The terms and definitions from JESD88 are provided here for quick search. This area will be updated as new terms and definitions are developed by JEDEC Committees and approved by the JEDEC Board of Directors.

average noise figure; average noise factor (

)

The ratio of (1) the total output noise power within an output frequency band when the noise temperature of all input terminations is at the reference noise temperature, T₀, at all frequencies that contribute to the output noise to (2) that part of (1) caused by the noise of the signal-input termination within the signal-input frequency band. (Ref. IEC 747‑1.)

NOTE 1 The abbreviation is often used in place of symbol ; however, symbol is preferred.

NOTE 2 This ratio may be expressed logarithmically in decibels (dB).

References:

JESD77-B, 2/00
JESD99B, 5/07
RS-311-A, 11/81

average outgoing quality (AOQ)

The average lot fraction nonconforming, in parts per million, from a series of lots.

References:

JESD16-A, 4/95

average pulse duration

See "pulse duration, average".

References:

average rectified output current, 50-Hz or 60-Hz sinewave input, 180^o conduction angle (I_O)

The output current averaged over a full cycle from a rectifier with a 50‑Hz or 60‑Hz sinewave input and a 180^o conduction angle.

References:

JESD77-B, 2/00
JESD282-B, 4/00

average thermal resistance (θ)

The average temperature rise in the test line, ΔT, divided by power input, ΔP, as a result of passing current through the force terminals of the structure:

θ = ΔT/ΔP.

After convergence to target stress temperature, this parameter is optionally used in the feedback algorithm.

References:

JESD61, 4/97

average voltage

The value of a periodic voltage averaged over a full cycle unless otherwise specified.

References:

JESD77-B, 2/00
JESD282-B, 4/00

AWT

See "auto-load write transfer".

References:

axis of measurement (of a photoemitter)

The direction from the source of radiant energy, relative to the optical axis, in which the measurement of radiometric and/or spectroradiometric characteristics is performed.

References:

JESD77-B, 2/00

See "bit".

References:

See "port A; port B".

References:

See "byte".

References:

B-mode

See "acoustic data, B-mode".

References:

B; b

See "base terminal".

References:

See "bank address".

References:

back end of line (BEOL) (noun)

The portion of the semiconductor processing line that creates the conductive lines carrying power and signals between devices and to the interface connecting off-chip.

References:

JEP156, 3/09

back-end-of-line (BEOL) (adj)

Pertaining to the portion of the semiconductor processing line that creates the conductive lines carrying power and signals between devices and to the interface connecting off-chip.

References:

JEP156, 3/09

back-side substrate view area

The interface between the encapsulant and the back of the substrate within the outer edges of the substrate surface. (Refer to Type IV in Annex A of J‑STD‑035.)

References:

J-STD-035, 5/99

background charge

A synonym for "bias charge", used mainly in imaging devices.

References:

JESD99B, 5/07

backside of flip chip die

The surface of the device opposite the face to which the solder bump interconnections are attached.

References:

JESD22-B109, 6/02

backward diode

A semiconductor diode in which quantum-mechanical tunneling leads to a current-voltage characteristic with a reverse current greater than the forward current, for equal and opposite applied voltages, in some voltage range centered about the origin.

Graphic symbol (ref. IEEE Std 315):

References:

JESD77-B, 2/00

Dictionary: JESD88

User login

Browse Alphabetically

Standards & Documents

Standards and Documents Assistance

Dictionary RSS Feed