single-event gate rupture (SEGR)

An event in which a single energetic-particle strike results in a breakdown and subsequent conducting path through the gate oxide of a MOSFET.

NOTE An SEGR is manifested by an increase in gate leakage current and can result in either the degradation or the complete failure of the device.

References

JEP133B, 3/05
JESD57#, 12/96

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