reverse gate current, drain short-circuited to source (1) (of an insulated gate field-effect transistor) (IGSSR)

The direct current into the gate terminal with a reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal.

(2) (of a junction-gate field-effect transistor) (IGSS): The direct current into the gate terminal with the gate terminal reverse-biased with respect to the source terminal and the drain terminal short-circuited to the source terminal.

References

JESD24, 7/85
JESD77-B, 2/00


JESD24, 7/85
JESD77-B, 2/00

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