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breakdown voltage, forward gate-source (V(BR)GSSF)
The breakdown voltage between the gate terminal and the source terminal with a reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal.
NOTE The symbol V(BR)GSSF should be used with insulated-gate transistors having shunting diodes or similar voltage-limiting devices.
References
JESD24, 7/85Browse Alphabetically
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