bond-shear code for ball and wedge bond, type 3 - cratering

A condition under the die pad metallization in which the insulating layer (oxide or interlayer dielectric) and the bulk material (silicon) separate or chip out. Separation interfaces that show pits or depressions in the insulating layer (not extending into the bulk) are not considered craters. It should be noted that cratering can be caused by several factors including the wire bonding operation, the post-bonding processing, and even the act of shear testing itself. Cratering present prior to the shear test operation is unacceptable.

References

JESD22-B116, 7/98

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