See "upper-byte enable".

Synonym for "erasable programmable read-only memory (EPROM)".

Synonym for "gate array integrated circuit".

The adhesive material applied between the solder bump side of the flip chip die and the substrate.

A functional fault for which no test pattern can be created that will cause the effects of the fault to be observable at an externally accessible node.

A thyristor surge protective device (TSPD) that can switch in only one quadrant.

NOTE The two types are forward-conducting TSPDs and reverse-blocking TSPDs.

An output that, depending on its design, can either source or sink current, but not both.

A physical space occupied by a single gate equivalent, including any area allocated to power connections, signal connections, and isolation requirements.

A letter symbol that is used in place of the name of a unit.

NOTE Neither subscripts nor postscripts may be appended to unit symbols as a means of giving information about the special nature of the quantity under consideration. Such information should be conveyed instead by the quantity symbol.

A circuit used in synchronous/ asynchronous data communication applications to provide all the necessary logic to recover data in a serial-in, parallel-out fashion and to transmit data in a parallel-in, serial-out fashion.

NOTE This circuit is usually full-duplex (i.e., it can transmit and receive simultaneously) with the option to handle various data word lengths.

An electrostatic-discharge-sensitive (ESDS) device that is not in an electrostatic-discharge-protective package.

NOTE See "ESD-protective packing".

An indicator used in conjunction with a data or control term to signify that the combined term applies to the upper byte of a two-byte data interface device; e.g., UW means write enable, upper-byte.

An input that, when true, causes the data present on the upper byte input/outputs, terminals DQ8 through DQ15, to be written into the addressed cells of the device.

See "universal synchronous/asynchronous receiver transmitter".

A single gate equivalent that has been interconnected and is employed in the functioning of the circuit.

A programmable space on some devices that allows users to store nonfunctional data of any sort. It is often used to track design revision numbers or other such identifying information.

See "ultraviolet-erasable programmable read-only memory".

See “uncorrectable bit-error rate”.

A metric for data corruption rate equal to the number of data errors per bit read after applying any specified error-correction method.

A patterned, thin-film stack of material that provides 1) an electrical connection from the silicon die to a solder bump; 2) a barrier function to limit unwanted diffusion from the bump to the silicon die; and 3) a mechanical interconnection of the solder bump to the die through adhesion to the die passivation and attachment to a solder bump pad.

A two-terminal ABD with a voltage-current avalanche breakdown characteristic in one direction and either a forward or a blocking characteristic in the other

NOTE    Large transient currents will be clamped for positive cathode-to-anode voltages when driven into the avalanche breakdown region with one or more p-n junctions placed in series or parallel with each junction connected in the same direction. Large transient currents may also be clamped for negative cathode-to-anode voltages at significantly lower voltages with the typical forward-conducting characteristics of a single p-n junction (or of multiple p-n junctions connected in the same direction). The most common type of unidirectional ABD has a forward-conducting characteristic.

Unidirectional-conducting ABD                                               Unidirectional-blocking ABD

A two-terminal device comprising a unidirectional-blocking low-capacitance ABD and an anti-parallel diode.

NOTE    To create a low-capacitance ABD with a forward-conducting, low-voltage characteristic, a low-capacitance diode (such as a rectifier) is placed in anti-parallel to the unidirectional-blocking low-capacitance ABD. This diode must have a reverse blocking voltage greater than the avalanche breakdown voltage of the unidirectional ABD.