The free-fall drop height of the drop table needed to attain the prescribed peak acceleration and pulse duration.

The desired value for a statistic of a characteristic or parameter of a process node.

The desired time it should take for the resistance of the test structure to first equal or exceed the failure resistance criterion, R_FC, while the structure is under stress from the SWEAT algorithm.

See "temperature coefficient of resistance".

See "test data out".

Acceptance testing of the surface finish material set and the manufacturing processes that include a defined set of base metals, underplating metals, surface finish alloy, surface finish bath chemistry, and process flow steps.

The value of the last recorded estimated mean temperature of the test structure during the control cycle before the failure criterion, R_FC, is satisfied.

The change in input bias current divided by the change in temperature.

NOTE This quotient is the average value for the total temperature change. The change in input bias current is usually not normalized to the initial value of input bias current.

The change in input offset voltage divided by the change in temperature.

NOTE This quotient is the average value for the total temperature change. The change in input offset voltage is usually not normalized to the initial value of input offset voltage.

The fractional change in resistance of the test structure per unit change in temperature at a specified temperature T_ref, as described in the following equation:

where

R(T_ref) is the resistance of the test structure at temperature T_ref (Ω);
ΔR is the change in resistance (Ω);
ΔT is the change in temperature that caused the change in resistance (°C).

The time interval between one high-temperature extreme and the next, or from one low-temperature extreme and the next.

An externally available point of connection.

NOTE The use of the term "termination" as a synonym is deprecated because that term denotes the external elements connected to the terminal.

(2) (for outline drawing purposes): That part of the package or device used primarily for making an electrical, mechanical, or thermal connection. Examples of terminals are flexible leads, rigid leads, and studs.

The terminal that is designated "2" by the manufacturer.

The term "terminal-to-ground capacitance" is preferred.

The test temperature, supply voltage, current limits, voltage limits, clock frequency, input bias voltages, and preconditioning vectors applied to a device being tested.

Serial scan test data output.

The time interval from the beginning of a test clock cycle to the instant when an output of a device is observed and compared to an expected result.

Latch-up trigger testing of a device in a known stable state, at the minimum-rated clock frequency applied to the device.

The resistance of the non-joule-heated test line at any time during the test.

A control input that enables the scan test clock and is used to select test modes.

The ratio of the total number of detected faults to the total number of detectable faults.

Serial scan test port reset

The nature of the electrical signal used to measure electrical model parameters. It can be characterized by risetime, pulse shape, frequency, amplitude, etc.

Creation and insertion of test circuitry to improve testability of a design.

A circuit or IC designed for the purpose of evaluating one or many device characteristics.

NOTE 1 For the purposes of JESD89, the characterization is the soft-error sensitivity of a particular process technology, but the test vehicle can incorporate other structures used to characterize different parameters, such as yield, speed, voltage margin, etc.

NOTE 2 This test vehicle is not typically a product but is a dedicated component or section of an IC chip designed to be used in predicting the SER of a product.

See "test function".

The transient thermal impedance from the semiconductor junction(s) to the ambient.

The transient thermal impedance from the semiconductor junction(s) to a stated location on a lead.

The transient thermal impedance from the junction to a reference point. For a specified power pulse duration, Z_θJX is given by

Z_θJX = (T_Jf - T_Ji - ΔT_X) / P_H

where

T_Jf is the junction temperature at the end of the power pulse;

T_Ji is the junction temperature before the start of the power pulse;

ΔT_X is the change in reference point temperature during the heating pulse. For short heating pulses, e.g., during die attach evaluation, this term is normally negligible;

P_H is the magnitude of the heating power pulse applied to the device under test, i.e., the product of I_H and V_H.

The thermal resistance from the device case to the ambient.

(1) The thermal resistance from the virtual junction(s) of a semiconductor device to a stated location on the case.

(2) The thermal resistance from the virtual junction(s) of a semiconductor device to the outside surface of the package (case) closest to the chip mounting area when that same surface is properly heat sunk so as to minimize temperature variation across that surface.

The thermal resistance from the semiconductor junction(s) to a stated location on a lead.

The thermal resistance from the semiconductor junction(s) to a stated location on the mounting surface.

The thermal resistance from the virtual junction of a semiconductor device to a defined reference point within the specified environment surrounding the device.

A temperature measurement sensor comprising two dissimilar metals intimately joined together in a bead at one end that produces a small thermoelectric voltage, corresponding to the temperature of the bead.

A bridge circuit that produces a variable dc output from a three-phase ac input.

A circuit that produces a three-phase ac output from a dc input.

Cells or macros whose outputs can be placed in a high-impedance state and can also supply low-impedance high and low logic levels.

The point at which a logic signal transitions from one logic state to another.

An acoustic microscope that transmits ultrasound completely through the sample from a sending transducer to a receiver on the opposite side.

A semiconductor device that is capable, due to internal feedback, of assuming either of two stable states and maintaining the assumed state either with no sustained control current or voltage or at least with considerably less than that necessary to initially establish that state, and that is designed to operate as a switch for the principal or on‑state current.

NOTE 1 A thyristor is a switch that can be switched on either for only one direction of the principal current (a unidirectional thyristor) or for both directions (a bidirectional thyristor).

NOTE 2 The usual configuration is a pnpn configuration to which can be added other elements needed for additional functions.

NOTE 3 The term "thyristor" may be used for any member of the pnpn family (including devices having more than four layers) when such use does not result in ambiguity or misunderstanding. In particular, the abbreviated term "thyristor" is widely used for the reverse-blocking triode thyristor, formerly called "SCR", "semiconductor controlled rectifier", or "silicon controlled rectifier".

A three-terminal thyristor having substantially the same switching behavior in the first and third quadrants of the principal characteristic.

NOTE Usually the configuration is pnpnp or npnpn.

Graphic symbol (ref. IEEE Std 315):

A gate-turn-off thyristor whose rated reverse voltage is significantly lower than its rated off-state voltage.

A reverse-conducting triode thyristor that can be switched from the on state to the off state as well as from the off state to the on state by applying control signals of appropriate polarity to the gate terminal.

A unidirectional triode thyristor whose gate terminal is connected to the n‑region nearest the anode and that is normally switched to the on‑state by applying a negative signal to the gate terminal with respect to the anode terminal.

A unidirectional diode thyristor that exhibits a blocking state in the reverse direction.

Graphic symbols (ref. IEEE Std 315):

A reverse-blocking triode thyristor whose rated reverse voltage is significantly lower than its rated off-state voltage.

A unidirectional diode thyristor that conducts large currents in the reverse direction at reverse voltages comparable in magnitude to the forward on‑state voltage.

NOTE Thyristors intended for use as surge protective devices and meeting this definition are referred to as forward-conducting rather than reverse-conducting.

Graphic symbols:

A semiconductor power-control module consisting only of thyristors, with the control signal(s) supplied from an external source.

Synonym for "thyristor surge protective device".

A three-terminal thyristor that can switch only when the anode voltage is positive.

NOTE In this definition, a second cathode or anode terminal for connecting to the control circuit is not counted.

(1) In the reflective mode, the time it takes for the acoustic pulse to travel from a single transducer/receiver to the interface of interest and back.

(2) In the through-transmission mode, the time it takes for the acoustic pulse to travel from the sending transducer through the sample to the receiving transducer.

The time it takes under specific conditions for the value of a particular parameter to reach a specified failure criterion. See also "time to target".

The timing models of a set of macrocells and/or macro functions.

The process of exercising the functional and timing models of a particular netlist by applying input stimuli to observe the timing responses.

The process(es) performed during the manufacture of a component to reduce the propensity for tin whisker growth by minimizing the surface finish internal compressive stress.

See "time-of-flight".

A failure of stud, fixture, or other mechanical apparatus that prevents the execution of a tensile pull on the die.

The surface layout design of a microcircuit, applied chiefly to the preparation of the masks used in fabrication.

The distance between the finish surface and the tip of the whisker that would exist if the whisker were straight and perpendicular to the surface.

NOTE For tin whiskers that bend and change directions, the total axial length can be estimated by adding all of the straight subdivisions of the whisker.

The maximum difference (positive or negative) between an analog value and the nominal midstep value within any step.

NOTE 1 If this error is expressed as a relative value, the term "relative accuracy error" should be used rather than "absolute accuracy error" or "total error".

NOTE 2 This error includes all contributions from offset error, gain error, linearity error, and the inherent quantization error.

The ratio, expressed as a percentage, of the rms voltage of all harmonics present in the output to the total rms voltage of the output, for a pure sine-wave input.

The sum of static phase offset, dynamic phase offset, and phase jitter.

The management of company resources with the exclusive focus on customer satisfaction as the means of achieving sustained financial success. It combines the efforts of all employees to develop, implement, continually assess, and improve the effectiveness of its processes and systems in support of the customers' needs.

A bipolar output whose active devices are so controlled that as the resistance of one increases, the resistance of the other decreases so that, according to the relative states of the two active devices, the output voltage can swing between levels approaching the two supply voltages.

NOTE 1 The term "totem-pole output", as commonly used, does not include three-state outputs.

NOTE 2 No standard qualifying symbol, as part of a graphic symbol, exists to designate the totem-pole output. In ANSI/IEEE Std 91 and IEC 617-12 these outputs are identified by the absence of a qualifying symbol.

On a device having both serial and parallel access ports, the output that, when true, signifies that a transfer of data from the parallel to the serial port, in certain special transfer cycles, has been completed. In devices and modules that have multiple QSFs, the QSFs are numbered beginning with 0.

A gate electrode, isolated from the channel by an insulating layer or junction, to which voltage is applied in order to transfer charge.

A semiconductor microwave diode that exhibits negative resistance arising from the transferred-electron effect.

NOTE 1 The transferred-electron effect is the generation of bulk negative differential conductivity in compound semiconductor devices that have multiple energy valleys when the applied electrical field is greater than the critical value at which electrons transfer from (1) a lower energy valley in which they have greater mobility and smaller effective mass to (2) a higher energy valley in which they have smaller mobility and greater effective mass.

NOTE 2 The term "energy valley" refers to a valley in an energy-versus-momentum profile.

A semiconductor device that is intended to limit voltage transients by conducting surge currents.

A transistor in which electrical conduction depends on the flow of both majority and minority carriers.

A semiconductor power-control module consisting of transistors and rectifier diodes, with the control signal(s) supplied from an external source.

A field-effect transistor having one or more gate electrodes that are electrically insulated from the channel.

A transistor having a base and two or more junctions.

Graphic symbols for triode transistors (Ref. ANSI Y32.2):

NOTE In the graphic symbols, the envelope is optional if no element is connected to the envelope.

An insulated-gate field-effect transistor in which the insulating layer between each gate electrode and the channel is oxide material.

A pnp transistor formed from the base and collector regions of a normal npn bipolar transistor and the substrate.

The product of the modulus (magnitude) of the common-emitter small-signal short-circuit forward current transfer ratio, h_fe, and the frequency of measurement when this frequency is sufficiently high that the modulus (magnitude) of h_fe is decreasing with a slope of approximately 6 dB per octave. (Ref. IEEE Std 255.)

The time interval between two specified levels, one near the beginning and one near the end of the same pulse edge.

The time interval between the specified low-level voltage and a specified high-level voltage on a waveform that is changing from the defined low level to the defined high level.

The movement of a process in a consistently increasing or decreasing direction.

An alternative term for "thyristor, bidirectional triode".

The duration of an applied pulse from the trigger source.

A field-effect transistor having a gate, a source, and a drain. (Ref. IEC 747‑8.)

NOTE If no confusion is likely, the term may be abbreviated to "field-effect triode".

The theoretically exact location of a feature established by basic dimensions.

Small-outline packages having gull-wing leads and whose thickness is substantially less than that of the standard SOG package. TSOP1 has the leads on the ends or short edges of the package while TSOP2 has the leads on the sides or long edges of the package. The lead pitch is often finer than that commonly used in the standard SOG package.

See "thyristor surge protective device".

A varactor diode used for rf tuning.

NOTE This includes functions such as automatic frequency control (AFC) and automatic fine tuning (AFT).

The sum of storage time and fall time, i.e., t_s + t_f.

See "transient voltage suppressor".

The normal environmental and/or operating ranges that the application is known to function within.

NOTE This is a subset of the application use conditions.

(1) A graphical portrayal of temperature experienced by an assembly as it passes through a soldering process.