The total radiant flux emitted divided by the total input power.

(1) The process of emitting radiant energy in the form of electromagnetic waves or moving nuclear particles.

NOTE 1 Electromagnetic waves include x-rays, gamma rays, light, etc. These forms of radiation all consist of photons, which are quanta of electromagnetic energy.

NOTE 2 Nuclear particles include alpha particles (helium nuclei), beta particles (electrons), neutrons, and other atomic particles that can transfer energy to a material. Subatomic particles such as quarks are not considered.

(2) Energy radiated in the form of electromagnetic waves or moving nuclear particles.

NOTE See notes to "radiation" (1).

(3) The transmission of heat via electromagnetic waves.

The aspect of product assurance that ensures that parts continue to perform within specifications or degrade in a specified manner when subjected to given radiation environments.

The radiation level to which the die manufacturer guarantees satisfactory performance.

A bipolar (three-state or totem-pole) output that can swing between voltage levels that are essentially equal to the supply voltages.

NOTE This is typically accomplished by driving the active devices from boost voltages or charge pumps.

The time separation between the actual curve of the analog output and the theoretical curve (with no delay) for a ramp in reference voltage, after the settling time to steady-state ramp has elapsed.

A RAM write cycle in which the data bits that are to be written are controlled by a write mask that is supplied at the beginning of the write cycle on the DQ(n) terminals. A high mask bit normally enables the write function for that bit; a low mask bit leaves the data unaltered.

(1) A memory in which access to all storage data can be achieved in essentially the same time, independent of the location. In a multiport memory, this term refers to that portion of the array that contains the memory cell array and its drivers, sense amplifiers, control circuitry, and the circuitry associated with the normal random-access data port.

(2) A memory that permits access to any of its address locations in any desired sequence with similar access time to each location. (Adapted from IEC 748‑2.)

NOTE The term "random-access memory", as commonly used, denotes a read/write memory with unlimited data rewrite capability and similar read and write times.

A condition in which individual values are not predictable, although they may come from a definable distribution.

The difference between the maximum and minimum values. A measure of spread.

The moisture sensitivity level as determined by J‑STD‑020.

See "recall".

See "row enable input".

(1) To transfer the configuration data from a programmable logic device (PLD) into a file. This process is similar to verification, except that the contents of the PLD are actually transferred to the programming system.

(2) To acquire or to interpret data from a storage device, from a data medium, or from another source. (Ref. ANSI X3.172.)

The corruption of data caused by reading the memory.

A memory in which the contents are intended to be read only and not to be altered during normal operation. (Ref. IEC 748‑2.)

NOTE Unless otherwise qualified, the term "read-only memory" implies that the data content is determined by the structure of the memory and is unalterable.

A nonmemory cycle in which the contents of the write mask register are interrogated, with the results placed on the RAM data terminals, DQ(n).

The output that, on some devices, signifies that no internal asynchronous operations are still in process and that the device is available for normal functions. This signal is normally implemented so that multiple devices can be OR-tied. This signal is the inverse of BY (i.e., RY = NOT BY).

The ac rms collector current divided by the in-phase (real) component of the small-signal ac rms collector-emitter voltage and with the base terminal ac open-circuited.

The soft error rate in a naturally occurring alpha particle and neutron environment.

NOTE 1 The RTSER is measured using a large number of devices to obtain a statistically significant error count, in contrast to an accelerated SER test, where an intense radiation source is used on a single device or a small number of devices.

NOTE 2 The RTSER error rate can be increased by using a higher neutron flux at higher altitudes, but for the purposes of this specification, the term "accelerated" is reserved for intense radiation sources that do not occur in natural terrestrial environments.

The input that transfers the nonvolatile data into the RAM array.

(2) (of a product): A public call by a manufacturer for the return of a product that may be defective or contaminated.

The time interval between the termination of the data-retention mode and the initiation of a read or write cycle.

NOTE This interval is defined with respect to specified reference points on the supply-voltage and chip-enable waveforms.

The time interval between the termination of a write pulse and the initiation of a new cycle, this time interval being provided for the memory to recover from a write operation and operate correctly.

NOTE Write recovery time is the actual time interval between two signal events and is determined by the system in which the memory operates. A minimum value is specified that is the shortest interval for which correct operation of the memory is to be expected.

An integral assembly of two or more rectifier diodes, including its associated housing and any integral mounting and cooling attachments.

A microcomputer or microprocessor that performs a single task per simple instruction, usually within a single clock cycle.

A specified absolute temperature to be assumed as a noise temperature at the input ports of a network when calculating certain noise parameters and for normalizing purposes. (Ref. IEC 747‑1.)

NOTE A reference noise temperature of 290 K is considered to be standard in the USA.

A power supply that acts as a reference for determining internal threshold voltages but does not supply any substantial power to the device.

An acoustic microscope that uses one transducer as both the pulser and the receiver.

NOTE This apparatus is also known as a pulse/echo system.

The time interval between the beginnings of successive signals that are intended to restore the level in a dynamic memory cell to its original level.

NOTE The refresh time interval is the actual time interval between two refresh operations and is determined by the system in which the digital circuit operates. A maximum value is specified that is the longest interval for which correct operation of the digital circuit is to be expected.

Outlines that are officially recorded by the JEDEC Type Registration System. The outlines are assigned JEDEC designations and published in JEDEC Publication No. 95.

A hybrid between a behavioral description and a structural description at the level of clocked registers.

A plane that (1) passes through the apex of the terminal that has the greatest perpendicular distance from the package substrate and (2) is parallel to the best-fit plane through the apexes of all terminals determined using the method of least squares.

NOTE The regression plane may be used to emulate the package coplanarity during reflow soldering at the point of surface mounting.

The ratio of the amount of water vapor in the air to the maximum amount of water vapor that air can hold at that temperature and pressure.

NOTE RH is calculated as the quotient of the vapor density (or vapor pressure) in the air and the value of saturated vapor density (or saturated vapor pressure) at that specific temperature and pressure.

The ability to consistently reproduce a given output. Repeatability involves the capabilities of an instrument, test, or process to produce the same output many times. Repeatability is considered interchangeable with the term "precision". Statistical techniques in conjunction with data taken from repeatability studies can be used to determine the process capability of an instrument, test, or process.

The peak reverse current including all repetitive transient currents but excluding all nonrepetitive transient currents.

The variation in averages of measurements made by different operators using the same gauge when measuring identical characteristics of the same parts. Variation in measured averages may also be due to changes in the environment (temperature, humidity, etc.).

The person, employed by either the organization that uses the component in question (i.e., the customer) or the device manufacturer (e.g., in wafer fabrication), who initiates the request for a failure analysis.

A terminal whose function is not currently defined, but that is intended to be defined in some future enhancement of JESD21-C. This terminal should not be used (either internally or externally) until it has been further defined.

To cause a counter to take the state corresponding to a specified initial number. (Ref. IEC 824.)

A semiconductor resistor formed by isolating a region of the epitaxial material that, in other regions, forms the collectors of the transistors.

A resistor formed by deposited films, usually metal, on an insulating substrate or the semiconductor oxide on an integrated-circuit chip surface.

The degree to which nearly equal values of a quantity can be distinguished or produced.

NOTE 1 Resolution as a capability can be expressed in different forms (see "resolution, analog", "resolution, numerical", and "resolution, relative").

NOTE 2 Resolution is a design parameter and therefore has only a nominal value.

NOTE 3 The terms for these different forms may all be shortened to "resolution" if no ambiguity is likely to occur (for example, when the dimension of the term is also given).

(2) (of an analog-to-digital converter): The degree to which nearly equal values of the analog input quantity can be discriminated.

(3) (of a digital-to-analog converter): The degree to which nearly equal values of the analog output quantity can be produced.

The number (n) of digits in the chosen numbering system necessary to express the total number of steps.

NOTE 1 The numbering system is normally a binary or a decimal system.

NOTE 2 In the binary-coded-decimal numbering system, the term "2 digit" refers to an additional decimal digit with the highest positional value, but limited to the decimal figures "0" or "1" as it is represented by only a single bit. This additional digit serves to double the range of values covered by the other "n" digits.

A procedure using a sequential combination of design of experiments (DOE) and regression analysis for determining factor settings that optimize a response.

A change of stored data by one or more bits, detected when the device is read according to data sheet specifications.

The bias that tends to produce reverse current.

The state of a reverse-blocking or asymmetrical thyristor that corresponds to a reverse voltage between the origin and the beginning of the reverse breakdown region.

The state of a reverse-conducting triode thyristor that corresponds to the third quadrant of the characteristic.

The direction of a (positive) reverse current.

(2) (in an avalanche-junction transient voltage suppressor): The direction of current that results when the n‑type semiconductor region connected to one terminal is at a positive potential relative to the p‑type region connected to the other terminal.

NOTE Any capacitance-reduction diodes that may be included shall be ignored in the determination of reverse direction.

(3) (in a semiconductor junction, excluding backward and tunnel diodes): The direction of higher resistance to steady direct-current flow through a semiconductor junction.

The direct current into the gate terminal with a reverse gate-source voltage applied and the drain terminal short-circuited to the source terminal.

(2) (of a junction-gate field-effect transistor) (I_GSS): The direct current into the gate terminal with the gate terminal reverse-biased with respect to the source terminal and the drain terminal short-circuited to the source terminal.

A microwave diode in which the cathode is connected to the base (i.e., the larger-diameter terminal) of the package.

The power dissipation resulting from reverse current.

The portion of the reverse recovery time interval after the reverse recovery current has reached its maximum (peak) value.

The absolute value of the ratio of (1) di_RR/dt (the rate of rise of the reverse recovery current) when the current is passing through zero at the beginning of the reverse recovery time, to (2) di_RF/dt (the maximum value of the rate of fall of the reverse recovery current) after the current has passed through its peak value, I_RM.

NOTE The ratio of reverse recovery current fall time (t_b) to the reverse recovery current rise time (t_a) has been called "recovery softness factor" (RSF); however, RRSF is a more useful measure of the diode softness characteristic.

The voltage between the n‑type region and the p‑type region when the n‑type region is at a positive voltage relative to the p‑type region.

(2) (across a semiconductor diode): A positive cathode-anode voltage.

See "reserved for future use" and "reserved pins".

See "relative humidity".

See "radiation-hardness assured capability level".

The alternating component whose instantaneous values are the difference between the average and instantaneous values of a pulsating unidirectional current.

The ratio, in percent, of the effective (root-mean-square) value of the ripple current to the average value of a pulsating unidirectional current.

For a step-function change of the input signal level, the time interval between the end of the rise time or fall time and that instant at which the magnitude of the output signal reaches for the last time a specified level range (±ε) containing the final output signal level. (Ref. IEC 747‑3.)

See "reduced-instruction-set computer".

That part of the recovered charge that is recovered from the diode during the reverse recovery rise time.

NOTE The time intervals t_rrf and t_rrr are defined so that their sum is equal to the reverse recovery time t_rr, whereas the recovered charge Q_rr is defined for an integration time t_i. As a consequence, the sum of the partial charges Q_rrf and Q_rrr will differ from Q_rr unless t_rr equals t_i.

Statistics calculated excluding outlying data. The use of the term "robust" signifies statistics that are insensitive to outliers.

Acronym for the European directive Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment.

See "read-only memory".

In an address-multiplexed DRAM, the address field that is captured by the row-enable signal, RAS. When the numbering of the row-address numbering is significant for device operation, the RA inputs are numbered beginning with 0.

See "registered PROM".

See "RAM read/write, no mask".

See "read transfer".

A number of consecutive points, usually seven or eight, above or below the centerline.

See "RAM write with new mask".

See "read-write mask register".

A subjective measure of the ease with which a character or text may be read.

The process of demonstrating that an entity is capable of meeting or exceeding the specified reliability requirements, usually by tests using accelerating conditions and proven models.

A procedure for estimating statistics, e.g., mean and variance, that performs well when there are departures (outliers) from the ideal conditions that have been postulated for the model.

See “failure cause”.