Dictionary O

Information that can be verified, based on factors obtained through observation, measurement, test, or other means.

EIA-599-A, 6/98

The ability to determine the logic state(s) of a node at the circuit's externally accessible node(s).

JESD12-5, 8/88
The interval between two frequencies that have a ratio of 2 to 1. NOTE The number of octaves, N, between two frequencies, f1 and f2, is given by N =
log (f2/f1)

See "output enable".

The small-signal impedance between the terminals through which the principal current flows when the thyristor is in the off state. (Ref. EIA‑397.)

JESD77-B, 2/00

The difference between the actual midstep [step] value and the nominal midstep [step] value at the offset point.

NOTE See notes 1, 2, and 3 under "gain error".

JESD99B, 5/07

The point in the transfer diagram corresponding to the midstep [step] value of the step about which the transfer diagram rotates when the gain is adjusted.

NOTE Offset adjustment must be performed with respect to this point so that it causes only a parallel displacement of the transfer curve.

JESD99B, 5/07

The current into a circuit node when the device or a portion of the device affecting that circuit node is in the off state.

NOTE When additional subscripts are used, the off-state current is identified by "off" in parentheses following the additional subscripts, e.g., IO(off) for off-state output current.

JESD99B, 5/07

The state of a thyristor, in a quadrant in which switching can occur, that corresponds to the portion of the characteristic between the origin and the breakover point.

(2) (of a thyristor surge protective device): The state of a thyristor surge protective device, in a quadrant in which switching can occur, that corresponds to the high dynamic-resistance portion of the characteristic between the origin and the beginning of the breakdown region.

JESD77-B, 2/00

JESD77-B, 2/00

The region of the drain voltage-current characteristic curve in which a change in drain-source voltage causes a proportional change in drain current.

JESD24, 7/85
JESD77-B, 2/00

The application of signature analysis to an unknown (assumed to be infinite) population of failures collected over time from multiple lots, events, or labs.

JEP136, 7/99

The small-signal impedance between the terminals through which the principal current flows when the thyristor is in the on state. (Ref. EIA‑397.)

JESD77-B, 2/00

The direct current into the drain terminal with a specified forward gate-source voltage applied to bias the device to the on-state.

JESD24, 7/85

The gate charge necessary to reach a gate-source voltage that will support a minimum specified on-state drain current.

JESD24-2, 1/91

The state of a thyristor, in a quadrant in which switching can occur, that corresponds to the low-resistance, low-voltage portion of the characteristic.

JESD77-B, 2/00

The resistance between specified terminals with input conditions applied that, according to the product specification, will establish minimum resistance (the on-state) between those terminals.

JESD99B, 5/07
OP

See "optional".

A circuit having a terminating impedance sufficiently high that halving its magnitude does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement.

JESD10, 9/81
JESD24, 7/85
JESD77-B, 2/00

In a circuit, a fault that alters the number of nodes by breaking a node into two or more nodes.

JESD12-5, 8/88

The capacitance measured across the input terminals (emitter and base) with the collector open-circuited for ac. (Ref. IEEE Std 255.)

JESD10, 9/81

The capacitance measured across the output terminals (collector and base) with the input open-circuited to ac. (Ref. IEEE Std 255.)

JESD10, 9/81

A unipolar output whose only connection within the integrated circuit is through an active device, usually a transistor, to one of the supply voltages.

NOTE 1 For the purpose of this definition, the presence of any parasitic components and freewheeling, flyback, and clamp diode is ignored.

NOTE 2 When the active device is in its on state, the output voltage approaches the voltage of the supply to which it is connected (through the active device); when the device is in its off state, the output impedance to any other terminal of the integrated circuit is high and the output voltage is determined by the external circuit to which the output is connected.

NOTE 3 Outputs of this generic class are usually classified according to the name of the element of the active device to which they are connected within the integrated circuit, e.g., open-collector output, open-drain output, etc.

NOTE 4 For graphic symbols, see "sink driver" and "source driver".

JESD99B, 5/07

The dc open-circuit voltage (floating potential) between the emitter terminal and the base terminal when the collector terminal is biased in the reverse direction with respect to the base terminal. (Ref. IEEE Std 255.)

JESD10, 9/81

An open-circuit output whose internal connection is to the collector of a bipolar transistor.

NOTE For graphic symbols, see "sink driver" (for npn) or "source driver" (for pnp).

JESD99B, 5/07

An open-circuit output whose internal connection is to the drain of a field-effect transistor.

NOTE For graphic symbols, see "sink driver" (for n‑channel outputs) or "source driver"(for p‑channel outputs).

JESD99B, 5/07

An output buffer that has one low-impedance output logic level and a high-impedance output state.

JESD12-4, 4/87

Synonym for "open-circuit output (of an integrated circuit)".

JESD99B, 5/07

An open-circuit output whose internal connection is to the emitter of a bipolar transistor.

NOTE For graphic symbols, see "source driver" (for npn) or "sink driver" (for pnp).

JESD99B, 5/07

An open-circuit output whose internal connection is to the source of a field-effect transistor.

NOTE For graphic symbols, see "source driver" (for p‑channel outputs) or "sink driver" (for n‑channel outputs).

JESD99B, 5/07

The length of time that a device is expected to function at or below the failure rate, stated in power-on hours (POH).

JESD94, 1/04

The temperature range of a component caused by power cycling.

JESD94#, 1/04

A line about which the radiant-energy or sensitivity pattern is centered. (Ref. IEC 747‑5.)

NOTE 1 The radiant-energy or sensitivity pattern may be nonsymmetrical.

NOTE 2 The optical axis may deviate from the mechanical axis.

JESD77-B, 2/00

The methodology of making a process as efficient as possible.

JEP132, 7/98

The process by which a given logic representation is reduced to a superior equivalent functional representation with respect to some system or chip-level design objective such as speed, device utilization, level of logic, etc.

JESD12-1B, 8/93
JESD99B, 5/07

The designation for pins for which the manufacturer has the freedom to supply a specialized function not previously defined in the standard without affecting compliance with the standard.

JESD21-C, 1/97

An optoelectronic device designed for the transformation of electrical signals by utilizing optical radiant energy to provide coupling with electrical isolation between the input and the output. (Ref. IEC 747‑5.)

JESD77-B, 2/00

(1) A device that is responsive to or that emits or modifies electromagnetic radiation in the visible, infrared, and/or ultraviolet spectral regions.

(2) A device that utilizes electromagnetic radiation in the visible, infrared, and/or ultraviolet spectral regions for its internal operation. (Ref. IEC 747‑5.)

JESD77-B, 2/00

An incident where outlier product significantly impacts customer reliability.

JESD62A, 5/02

Product that meets manufacturer specifications and user requirements but exhibits anomalous characteristics with respect to a normal population (an example of which is depicted by the histogram in the figure), and which may be subject to a higher-than-normal level of failures in the user's application.

LSL = lower spec limit USL = upper spec limit

Example of outlier product

JESD62A, 5/02

The end result of a process that is dependent on the input.

JEP132, 7/98

A cell or macro that accepts inputs from cells or macros internal to the integrated circuit and propagates signals external to the integrated circuit.

JESD12-4, 4/87

An output current in a region of relatively low differential resistance that serves to limit the voltage swing.

JESD99B, 5/07

An output voltage in a region of relatively low differential resistance that serves to limit the voltage swing.

JESD99B, 5/07

The input that, on some devices containing an output data register, causes the data to be set into the register.

JESD21-C, 1/97

The current into the output terminals.

(2) (of a voltage regulator): Synonym for "load current".

JESD14, 11/86

JESD99B, 5/07

A control input to an integrated circuit that, depending on the logic level applied to it, either permits or prevents the output of data from the device.

NOTE When disabled, the outputs assume a low level, a high level, or a floating (high-impedance) state, depending on the design of the particular circuit.

(2) (of a memory) [pin name G(n); OE(n)]: the input that, when false, disables the outputs and causes them to go to an inactive state but does not affect the writing function.

NOTE When disabled, the inactive state is floating (Z, high-impedance) for MOS and TTL devices, and low (L) for ECL devices. In modules that have multiple OEs, the OEs are numbered beginning with 0.

JESD100-B, 12/99

JESD21-C, 1/97

The small-signal impedance between the regulator output terminal and ground.

JESD99B, 5/07

An analog signal input that sets the output buffer impedance and the operating mode.

JESD21-C, 1/97

The small-signal impedance between two ungrounded output terminals of a differential amplifier.

JESD99B, 5/07

The small-signal impedance between one output terminal of a differential amplifier and ground with the other output terminal ac-grounded.

JESD99B, 5/07

The load on an output (usually specified in unit loads).

JESD12-1B, 8/93
JESD99B, 5/07

The rms output noise voltage with constant load and no input ripples.

JESD99B, 5/07

The dc voltage between two output terminals (or the output terminal and ground for circuits with one output) when the input terminal(s) are grounded.

JESD99B, 5/07

A device pin that generates a signal or voltage level as a normal function during the normal operation of the device.

NOTE Output pins, though left in an open (floating) state during testing of other pin types, are latch-up tested.

JESD78A, 2/06

The small-signal resistance between an output terminal and ground or between differential output terminals.

JESD99B, 5/07

The power pin that is intended to supply power to the output transistors of the device to provide the potential and energy to drive the load applied to the data output (Q) pins or data input/output (DQ) pins. Other, non-data, output transistors may also be designated to be supplied by this power pin. The potential of VDDQ may be specified the same as or different from that of the primary device power pins (VDD).

JESD21-C#, 1/97

The power pin that is intended to supply power to the output transistors of the device to provide the potential and energy to drive the load applied to the data output (Q) pins or data input/output (DQ) pins. Other, non-data, output transistors may also be designated to be supplied by this power pin. The potential of VCCQ may be specified the same as or different from that of the primary device power pins (VCC). VCCQ is restricted to 5‑V applications only.

JESD21-C#, 1/97

The ground reference voltage for the data output (Q) or input/output (DQ) pins. Other, non-data, output transistors may also be designated to be referenced to this ground pin. Internal to the device, this pin shall be dc-isolated from the primary ground reference (VSS) pin and any other ground reference pin. External to the device, it must be dc‑common with the primary ground reference.

JESD21-C, 1/97

The voltage at the output terminals.

JESD14, 11/86

The change in output voltage, usually expressed as a percentage of output voltage, over a period of time.

JESD99B, 5/07

The regulated voltage presented at the output of a regulator (or current-sensing resistor, if used).

JESD99B, 5/07

The average noise figure of the cascaded combination of a mixer and an IF amplifier.

JESD77-B, 2/00
RS-311-A, 11/81

The fraction of the input signal charge that is transferred as a packet to the output.

JESD99B, 5/07

A charge-coupled device formed so that adjacent transfer gates overlap and are insulated from one another.

JESD99B, 5/07

A current whose continuous application would cause the maximum-rated virtual junction temperature to be exceeded, but that is limited in duration such that this temperature is not exceeded.

NOTE Devices may be subjected to overload currents as frequently as called for by the application while being subjected to normal operating voltages. (Ref. IEC 747-2.)

JESD77-B, 2/00
JESD282-B, 4/00

The time interval required for an amplifier to recover its ability to perform amplification within stated specification limits after the output voltage amplitude has been distorted by the application of a specified input voltage in excess of rated amplitude or rated rate of change.

JESD99B, 5/07

The ratio of (1) the largest deviation of the output signal value from its final steady-state value after a step-function change of the input signal to (2) the absolute value of the difference between the steady-state output signal values before and after the step-function change of the input signal. (Ref. IEC 748‑3.)

JESD99B, 5/07

An oxide layer formed on a surface by methods not requiring the substrate to participate in the reaction.

NOTE Various methods such as pyrolysis, evaporation, or sputtering may be employed.

JESD99B, 5/07

An oxide layer formed on a semiconductor surface by the reaction of the semiconductor material with oxygen.

JESD99B, 5/07

A sharp variation of the plane of the oxide on the surface of a planar device.

JESD99B, 5/07

The failure rate determined from a product or test vehicle subjected to an accelerating stress that may produce failures attributable to one or more failure mechanisms.

JEP122E, 3/09
JEP143B.01, 6/08

A physical defect that is not correlated with a known process, equipment, or procedure and cannot be described by a probability-density function of time or location.

JEP143B.01, 6/08

The overall quality measure of a two-dimensional bar code symbol determined by machine scanning equipment per guidelines of ISO/IEC 15415 or ANSI INCITS 182-1990.

NOTE    The grades range from 0 (low) to 4 (high) for ISO/IEC 15415 and from F (low) to A (high) for ANSI INCITS 182-1990.

JESD22-B114, 3/08

Browse Alphabetically

A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z

Standards and Documents Assistance

Contact Julie Carlson, 703-624-9230

Dictionary RSS Feed

Subscribe to the JEDEC Dictionary RSS Feed to receive updates when new dictionary entries are added.