See "integrated circuit".

A group of output terminals nominally used to convey information about the configuration or other attributes of the device when plugged into a system. The function of these outputs is similar to those of the PD(n) terminals, but the latter often have different electrical interface characteristics.

See "insulated-gate bipolar transistor".

To place a device in a chain into a "bypass" mode, meaning that no operations are performed on that device. This would be done if devices in a chain were to be selectively programmed, for example.

The ac collector current divided by the out-of-phase (imaginary) component of the small-signal collector-emitter voltage with the base terminal open-circuited to the emitter for ac.

A semiconductor microwave diode that, when its junction is biased into avalanche, exhibits a negative resistance over a frequency range determined by the transit time of charge carriers through the depletion region.

The area in which a portion or all of the visual or mechanical indexes must lie.

A diode capable of emitting radiant energy in the infrared region of the spectrum as a result of the recombination of electrons and holes. (Ref. IEC 747‑5.)

A control input that provides a preassigned manufacturer- or user-defined code to be set into the data register. If the code is all 0s, it can be called "clear", and if all 1s, then "preset".

A microelectronic assembly whose terminals consist of metal pad surfaces located on one or both sides of a circuit board designed for insertion into an edge connector.

A parameter that characterizes the product prior to the finished product stage.

The current into the input or the average of the currents into the inputs when the device is in the quiescent or balanced state.

An input current in a region of relatively low differential resistance that serves to limit the voltage swing.

The input that, on devices that contain input buffer registers, causes the address on the A(n) pins, the data on the D(n) pins, and/or certain control inputs to be set into the register.

The parallel equivalent of the small-signal impedances between each input terminal of a differential amplifier and ground.

The small-signal impedance between one input terminal of a differential amplifier and ground with the other input terminal ac-grounded.

The difference between the currents into the input terminals of a differential-input device in the balanced state.

A generic term for an otherwise undefined signal pin that can operate as either an input or an output. This term is not used as a specific pin name but only as a generic indicator of the nature of the function of the pin.

The difference between the input voltage and the output voltage.

An input voltage in a region of relatively low differential resistance that serves to limit the voltage swing for the purpose of input protection.

The substantive and quantifiable attributes or input of a process model that, when combined into a common process or methodology, can be utilized to simulate the desired output.

Variables or steps that can alter, enhance, and/or validate a process.

The supply voltage to be regulated.

The additional error caused by the ageing of the components and specified for a relatively long period of time.

A register that is used to hold an instruction for interpretation. (Ref. IEC 824.)

A three-terminal (collector, emitter, and gate), four-layer (pnpn/npnp) semiconductor device with an MOS-gated channel connecting the two n‑type regions (for n‑channel types), or the two p‑type regions (for p‑channel types), and in which the conductance of the high-resistance collector region is modulated (enhanced) by the injection of minority carriers from an opposite-polarity semiconductor region adjacent to the collector and opposite the channel region.

NOTE 1 The IGBT is a compound semiconductor structure with input characteristics similar to those of a vertical power MOSFET, but containing an additional bipolar component that conductivity-modulates the drain region of the MOSFET section.

NOTE 2 The conductivity modulation of the vertical DMOS power MOSFET drain region substantially reduces the inherent rise in collector-emitter resistance that results with increasing collector-emitter voltage capability.

NOTE 3 The IGBT is similar in basic structure to an MOS-gated thyristor but exhibits a fundamental operational difference in that it maintains gate control, i.e., it does not latch, over a wide range of collector current and collector-emitter voltage.

NOTE 4 The term "insulated-gate bipolar transistor" (IGBT) is the generic name for the entire class of conductivity-enhanced MOS-gated pnpn/npnp devices. Other names used to identify these types of devices include conductivity-modulated field-effect transistor (COMFET), gain-enhanced MOS field-effect transistor (GEMFET), insulated-gate transistor (IGT), and insulated-gate rectifier (IGR).

Insulated-gate bipolar transistor graphic symbols (ref. IEC 617-5):

NOTE In the graphic symbols, the envelope is optional if no element is shown connected to the envelope.

A material having a surface resistivity of at least 1x10¹² ohms per square or volume resistivity of at least 1x10¹¹ ohm-centimeters.

A hybrid film integrated circuit in which at least one circuit element is active.

See "application-specific integrated circuit".

See "custom integrated circuit".

An integrated circuit whose circuit elements, including the interconnections, are extclusively film elements formed on the surface of an insulating substrate.

A film integrated circuit in which the main parts of the circuit elements are produced as film elements on a substrate and that is completed by mounting additional components on the substrate or elsewhere in the package.

An integrated circuit that accomplishes the linkage of two systems or parts of a system that would otherwise be incompatible.

NOTE The signals present at the inputs and the outputs of the interface integrated circuit may take any one of the following forms:

a) digital inputs, analog outputs;

b) analog inputs, digital outputs;

c) analog inputs, analog outputs; or

d) digital inputs, digital outputs. (In this case, the levels of the digital signals at the inputs and the outputs are dissimilar.)

Some circuits of types a, b, and c may also be classified as linear integrated circuits.

Deprecated synonym for "integrated circuit, single-chip".

A hybrid film integrated circuit in which all circuit elements are passive.

An integrated circuit or microcircuit consisting exclusively of elements formed in situ on or within a single semiconductor substrate with at least one of the elements formed within the substrate.

A film integrated circuit whose circuit elements are thin-film elements.

NOTE Usually, thin-film elements are formed by vacuum-deposition techniques, possibly supplemented by other deposition techniques.

The deliberate use in the formulation of a product or subpart where its continued presence is desired to provide a specific characteristic, appearance, or quality.

The capacitance per unit length attributable to a specified interconnection layer.

A failure found in tensile pull of flip chip solder joints, where any portion of the fracture surface occurs at an intermetallic formed between the solder and the device or substrate metallization.

The electric field due to the presence of space charges in the transition region.

NOTE This field is dependent on the impurity profile of the transition region and on the bias applied between the two adjacent neutral regions.

Synonym for "virtual-junction temperature".

A central processing unit (CPU) feature that allows the computer to ignore (mask) an interrupt request until the mask bit is disabled.

(1) A failure mechanism caused by a natural deterioration in the materials or by the manner in which the materials are combined during fabrication or assembly processes that are within specification limits.

(2) A failure mechanism attributable to natural deterioration of materials processed per specification.

A device pin that can be made to operate as an input or an output or in a high-impedance state.

See "infrared-emitting diode".

See "initialize input (synchronous)".

Electrical isolation of one or more elements of a single-chip semiconductor integrated circuit, achieved by surrounding the element(s) with a region of the conductivity type that forms a junction and reverse-biasing that junction.

The rms ac or dc voltage used for short-time testing of the insulation between the mounting surface and all of the terminals and also between terminals of isolated circuits.

A nearly pure and ideal semiconductor in which the electron and hole densities are nearly equal under conditions of thermal equilibrium. (Ref. IEC 747‑1.)

A waveform that has a defined virtual front time and a defined virtual time to half peak value.

NOTE 1    Impulse waveshapes may be given for either voltage or current.

NOTE 2    Virtual front time is the time interval between the virtual origin and the instant when the extrapolated leading edge reaches its peak; the extrapolation is made through the 10% and 90% amplitude points for current and the 30% and 90% points for voltage.

A physical defect inherent in the process architecture, design, or layout, or created during manufacturing (wafer fabrication or assembly) that is manifested during testing or screening.

The ratio of power delivered to a load with no ABD in the circuit to that delivered after the ABD is inserted.

See “integrated circuit, interface”.