1999 Program and Photos

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Sunday, October 17, 1999, Monterey Doubletree
Workshop Registration,
Ken McGhee & Sammy Kayali

Welcome, Opening Remarks, Introductions,
Anthony Immorlica, Workshop Chairman

SESSION 1 - Getting Started.    
Sammy Kayali, Session Chairperson

1-1. Channel Temperature Measurement of GaAs PHEMTs Using an Atomic Force Microscope.
    W. Anderson, J. Mittereder, and J. Roussos, Naval Research Laboratory.

1-2. Step-Stress Accelerated Testing in Ion-Implanted GaAs Self-Aligned Gate MESFETs.
   F. Gao and P. Ersland, AMP – M/A-COM.

1-3. Automated WLR Testing of HBT’s.
   E. Sabin, S. Dacus, and J. Scarpulla, TRW, Inc.

SESSION 2 - Bias Considerations.    
Robert Ferro, Chairperson 

2-1. RF Overdrive Experiments on 0.5 um Power pHEMTs.   
   V. Kaper, and P. Ersland, M/A COM.

2-2. The Effect of Gate and Recess Scaling on the Gate-Drain Breakdown and Hot-Electron Reliability of AlGaAs/GaAs Power HFETs. R. Menozzi, D. Dieci, G. Sozzi, T. Tomasi, and C. Lanzieri, University of Parma, Parma Italy, University of Modena and Reggio Emilia, Italy, Alenia Marconi Systems, Rome, Italy.

2-3. Investigation on GaAs Power MESFETs Submitted to RF Life-test by LF Noise and Drain Current Transcient Analysis.
   N. Saysset-Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto,     P. Huguet, P. Auxemery, F. Garat, Universite Bordeaux, United Monolithic Semiconductors, ESTEC-ESA.

Lunch

SESSION 3 - Lifetest Results.
Peter Ersland, Chairperson

3-1. Reliability Testing of 0.1 um GaAs Psuedomophic HEMT Amplifiers.
    D. Leung, Y. Chou, C. Wu, R. Kono, J. Scarpulla, R. Lai, M. Hoppe, and D. Streit, TRW, Inc.

3-2. Hydrogen Sensitivity of GaAs HEMT Amplifiers: The Effect of Bias Mode.  
  D. Eng and J. Scarpulla, TRW.

3-3. Preventing Degradation of GaAs Devices Using Getters.
    R. Mohanty, Alpha Microelectronic Packaging Materials and
Ken Gilleo, Cookson Electronics.

4-1. Reliability Performance of Components and ICs from a Production 1um GaAs HBT Process.
    F. Yamada, A. Oki, D. Striet, B. Hikin, E. Kaneshiro, M, Lammert, L. Tran, T. Block, P. Grossman,     J. Scarpulla, and
A. Gutierrez-Aitken, TRW, Inc.

4-2. Thermal Excursion Accelerating Factors.
        W. Roesch, TriQuint Semiconductor, Inc.

4-3. ESD Sensitivity Study of Various Diode Protection Circuits From a Production 1um GaAs HBT Process.
    F. Yamada, A. Oki, E. Kaneshiro, M. Lammert, and
   A. Gutierrez-Aitken, TRW, Inc.